Gate EC-2015 – 2 Question Paper With Solutions

Q. 16 A piece of silicon is doped uniformly with phosphorous with a doping concentration of Gate EC-2015 - 2 Question Paper With Solutions. The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is Gate EC-2015 - 2 Question Paper With Solutions. The conductivity Gate EC-2015 - 2 Question Paper With Solutions of the silicon sample at 300 K is _______.

Gate EC-2015 - 2 Question Paper With Solutions

Answer: (1.92)

Explanation:

Gate EC-2015 - 2 Question Paper With Solutions

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