Gate EC-2008 Question Paper With Solutions

Q. 18 A silicon wafer has 100 nm of oxide on it and is furnace at a temperature above Gate EC-2008 Question Paper With Solutions for further oxidation in dry oxygen. The oxidation rate

(A) is independent of current oxide thickness and temperature

(B) is independent of current oxide thickness but depends on temperature

Gate EC-2008 Question Paper With Solutions slows down as the oxide grows

(D) is zero as the existing oxide prevents further oxidation

Answer: D

Explanation:

Gate EC-2008 Question Paper With Solutions

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