Gate EC-2008 Question Paper With Solutions

Q. 51 Silicon is doped with boron to a concentration of Gate EC-2008 Question Paper With Solutions. Assume the intrinsic carrier concentration of silicon to be Gate EC-2008 Question Paper With Solutions and the value of kT/q to be 25 mV at 300 K. Compared to undopped silicon, the fermi level of doped silicon

(A) goes down by 0.31 eV

(B) goes up by 0.13 eV

(C) goes down by 0.427 eV

(D) goes up by 0.427 eV

Answer: C

Explanation:

Gate EC-2008 Question Paper With Solutions

Learn More:   Gate ME-2017-2 Question Paper With Solutions

LEAVE A REPLY

Please enter your comment!
Please enter your name here