Gate EC-2016 – 1 Question Paper With Solutions

Q.47 Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that Gate EC-2016 - 1 Question Paper With Solutions, the threshold voltage is 0.3 V, and the channel length modulation parameter is Gate EC-2016 - 1 Question Paper With Solutions, In the saturation region, the drain conductance (in micro siemens) is _____.

Answer: (28.35)

Explanation:

Gate EC-2016 - 1 Question Paper With Solutions

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