Q.47 Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that 
, the threshold voltage is 0.3 V, and the channel length modulation parameter is 
, In the saturation region, the drain conductance (in micro siemens) is _____.
Answer: (28.35)
Explanation:
