Gate EC-2016 – 1 Question Paper With Solutions

Q46 Consider a silicon p-n junction with a uniform acceptor doping concentration of Gate EC-2016 - 1 Question Paper With Solutions on the p-side and a uniform donor doping concentration of Gate EC-2016 - 1 Question Paper With Solutions on the n-side. No external voltage is applied to the diode. Given: kT/q = 26 mV,Gate EC-2016 - 1 Question Paper With Solutions
Gate EC-2016 - 1 Question Paper With Solutions. The charge per unit junction areaGate EC-2016 - 1 Question Paper With Solutionsin the depletion region on the p-side is _____.

Answer: (4.836)

Explanation:
Gate EC-2016 - 1 Question Paper With Solutions

Gate EC-2016 - 1 Question Paper With Solutions

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