Gate EC-2016 – 1 Question Paper With Solutions

Q49 Consider a silicon sample at T = 300 K, with a uniform donor density Gate EC-2016 - 1 Question Paper With Solutions illuminated uniformly such that the optical generation rate is Gate EC-2016 - 1 Question Paper With Solutions through out the sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes areGate EC-2016 - 1 Question Paper With Solutions

Gate EC-2016 - 1 Question Paper With Solutions
The hole concentration at t = 0 and the hole concentration at t = 0.3 μs , respectively, are
Gate EC-2016 - 1 Question Paper With Solutions

Answer: (C)

Explanation:
Gate EC-2016 - 1 Question Paper With Solutions

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