# Gate EC-2014 – 2 Question Paper With Solutions

Q. 36 When a silicon diode having a doping concentration of -side andon n-side is reverse biased, the total depletion width is found to be . Given that the permittivity of silicon is 1.04#10-12 F/cm, the depletion width on the p-side and the maximum electric field in the depletion
region, respectively, are