Gate EC-2014 – 2 Question Paper With Solutions

Q. 36 When a silicon diode having a doping concentration of Gate EC-2014 - 2 Question Paper With Solutions -side andGate EC-2014 - 2 Question Paper With Solutionson n-side is reverse biased, the total depletion width is found to be Gate EC-2014 - 2 Question Paper With Solutions. Given that the permittivity of silicon is 1.04#10-12 F/cm,Gate EC-2014 - 2 Question Paper With Solutions the depletion width on the p-side and the maximum electric field in the depletion
region, respectively, are
Gate EC-2014 - 2 Question Paper With Solutions

Answer: B

Explanation:

Gate EC-2014 - 2 Question Paper With Solutions

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