Gate EC-2014 – 2 Question Paper With Solutions

Q. 10 In CMOS technology, shallow P-well or N -well regions can be formed using

(A) low pressure chemical vapour deposition

(B) low energy sputtering

(C) low temperature dry oxidation

(D) low energy ion-implantation

Answer: D

Explanation:

Not Required

Learn More:   Gate CS-2007 Question Paper With Solutions

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