Gate EC-2015 – 1 Question Paper With Solutions

Q. 31 For a silicon diode with long P and N regions, the accepter and donor impurity concentrations areGate EC-2015 - 1 Question Paper With Solutions respectively. The lifetimes of electrons in P region and holes in N region are both 100 μs . The electron and hole diffusion coefficients are Gate EC-2015 - 1 Question Paper With Solutions respectively. Assume kT/q = 26 mV, the intrinsic carrier concentration isGate EC-2015 - 1 Question Paper With Solutions C. When a forward voltage of 208 mV is applied across the diode, the hole current density Gate EC-2015 - 1 Question Paper With Solutions injected from P region to N regions is ______.

Answer: 28.6

Explanation:

Gate EC-2015 - 1 Question Paper With Solutions

Gate EC-2015 - 1 Question Paper With Solutions

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