Q. 1 A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
(A) Both the P-region and N-region are heavily doped
(B) The N-region is heavily doped compared to the P-region
(C) The P-region is heavily doped compared to the N-region
(D) An intrinsic silicon region is inserted between the P-region and the N-region
Answer: A
Explanation:
