Q. 44 If P is Passivation, Q is n -well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n -well CMOS fabrication process, is
(A) P – Q – R – S
(B) Q – S – R – P
(C) R – P – S – Q
(D) S – R – Q – P
Answer: (B)
Explanation:
